?2005 fairchild semiconductor corporation 1 www.fairchildsemi.com MMBT5550 rev. a MMBT5550 npn genera l purpose amplifier august 2005 MMBT5550 npn general purpose amplifier ? this device is designed for general purpose high voltage amplifiers and gas discharge display drivers. absolute maximum ratings * t a = 25 c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes: 1. these ratings are based on a maximum junction temperature of 150 degrees c. 2. these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations . electrical characteristics t a = 25c unless otherwise noted symbol parameter value units v ceo collector-emitter voltage 140 v v cbo collector-base voltage 160 v v ebo emitter-base voltage 6.0 v i c collector current - continuous 600 ma t j , t stg junction and storage temperature -55 ~ +150 c symbol parameter test condition min. max. units off characteristics v (br)ceo collector-emitter breakdown voltage * i c = 1.0ma, i b = 0 140 v v (br)cbo collector-base breakdown voltage i c = 100 a, i e = 0 160 v v (br)ebo emitter-base breakdown voltage i e = 10ma, i c = 0 6.0 v i cbo collector cutoff current v cb = 100v, i e = 0 v cb = 100v, i e = 0, t a = 100 c 100 100 na a i ebo emitter cutoff current v eb = 4.0v, i c = 0 50 na on characteristics h fe dc current gain i c = 1.0ma, v ce = 5.0v i c = 10ma, v ce = 5.0v i c = 50ma, v ce = 5.0v 60 60 20 250 v ce(sat) collector-emitter saturation voltage i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma 0.15 0.25 v v v be(sat) base-emitter on voltage i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma 1.0 1.2 v v sot-23 1. base 2. emitter 3. collector 1 2 3 marking: 1f
2 www.fairchildsemi.com MMBT5550 rev. a MMBT5550 npn genera l purpose amplifier electrical characteristics t a = 25c unless otherwise noted thermal characteristics t a =25 c unless otherwise noted * device mounted on fr-4 pcb 1.6" 1.6" 0.06." package marking and ordering information symbol parameter test condition min. max. units small signal characteristics f t current gain bandwidth product i c = 10ma, v ce = 10v, f = 100mhz 50 mhz c obo output capacitance v cb = 10v, i e = 0, f = 1.0mhz 6.0 pf c ibo input capacitance v be = 0.5v, i c = 0, f = 1.0mhz 30 pf symbol parameter max. units p d total device dissipation derate above 25 c 350 2.8 mw mw/ c r ja thermal resistance, junction to ambient 357 c/w device marking device package re el size tape width quantity 1f MMBT5550 sot-23 7? -- 3,000
3 www.fairchildsemi.com MMBT5550 rev. a MMBT5550 npn genera l purpose amplifier typical performance characteristics figure 1. typical pulsed current gain vs collector current figure 2. collector-emitter saturation voltage vs collector current figure 3. base-emitter saturation voltage vs collector current figure 4. base-emitter on voltage vs collector current figure 5. collec tor cutoff current vs ambient temperature figure 6. input and output capacitance vs reverse voltaget 0.1 1 10 100 0 50 100 150 200 250 50 20 5 2 0.5 0.2 -40 o c 25 o c 125 o c v ce = 5v h fe - typi c al pul s ed c urrent g ain i c - collector current (ma) 110100 0.0 0.1 0.2 0.3 0.4 0.5 - 40 o c 25 o c 125 o c = 10 v cesat - collector emitter voltage (v) i c - collector current (ma) 110100 0.0 0.2 0.4 0.6 0.8 1.0 200 125 o c 25 o c - 40 o c = 10 v besat - base emitter voltage (v) i c - collector current (ma) 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 - 40 o c 25 o c 125 o c v ce = 5v v beon - base emitter on voltage (v) i c - collector current (ma) 25 50 75 100 12 5 1 10 50 t - ambie nt temp erature ( c) i - colle ctor current (na) a cbo v = 10 0v cb 0.1 1 10 100 0 5 10 15 20 25 30 v - collector voltage (v) capacitance (pf) c f = 1.0 mhz ce c cb ib
4 www.fairchildsemi.com MMBT5550 rev. a MMBT5550 npn genera l purpose amplifier typical performance characteristics (continued) figure 7. power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 100 200 300 400 500 p d -power disspation (mw) temperature( 0 c)
5 www.fairchildsemi.com MMBT5550 rev. a MMBT5550 npn genera l purpose amplifier mechanical dimensions sot-23 dimensions in millimeters
trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intend ed to be an exhaustive list of all such trademarks. 6 www.fairchildsemi.com MMBT5550 rev. a MMBT5550 npn genera l purpose amplifier disclaimer fairchild semiconductor reserves the right to m ake changes without further notice to any products herein to improve reli ability, function or design. fai rchild does not assume any liability arising out of the application or use of any pr oduct or circuit described herein; neither does it convey any license under its patent ri ghts, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express writ ten approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose fail ure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to per form can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains th e design specifications for product development. specifications may change in any manner without notice. preliminary first production this datash eet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datash eet contains final spec ifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? wire? acex? activearray? bottomless? build it now? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? across the board. around the world.? the power franchise ? programmable active droop? rev. i16
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